| ‘lllvVISHAYQV instantaneous Reverse Leakage Current (UA) instantaneous FonNard Current (A) Um wwwyehaycom 100 Pulse Width : 300 Us1 % Duty Cycle 5 E3 mm0.2 0.4 0.6 ca 1.0 1.2 14 1.6 1.8 Instantaneous FonNard Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics I00 to .G Percent of Rated Peak Reverse Voltage (%) Fig. A - Typical Reverse Leakage Characteristics EGP50A, EGP50B, EGP50C, EGP50D, EGP50F, EGP50G Vishay General Semiconductor 210 T80 I50 I20 90 an Junction Capacitance (pF) an Reverse Voltage (V) Fig. 5 ? Typical Junction Capacitance Ion Transient Thermal impedance (“C/W) E I00 t- Pulse Duration (s) Fig. 6 - Typical Transient Thermal impedance PACKAGE ouTLINE DIMENSIONS In Inches (millimeters) ozms 3)a ‘sum 8)DlA 0.042 (1 07)0.037 (0 94)DIA Revision: 15?Aug-13 For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com3Document N umber: 88585 —>‘ GP20 THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |